The most common photodetectors are photodiodes, phototransistors and avalanche photodiodes. Optical signals are converted into electrical signals by means of photodetectors. Other advantages of CMOS OEICs over III–V solutions are the possibility for cheap mass production, easy handling, packaging, etc. This for example leads to an excellent immunity against electromagnetic interference. One advantage for example is the avoidance of the bond pads and bond wires between photodetector and read out circuitry. These single-chip devices exceed assemblies of wire bonded compound photodetectors and integrated circuits in many aspects. Compared with III–V compound semiconductors, CMOS technologies have some major advantages like the possibility to combine silicon photodetectors together with the signal processing circuitry into an optoelectronic integrated circuit (OEIC). During the last decades CMOS processes evolved to mature technologies, wherein a cheap implementation of integrated circuits is possible.
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